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onsemi FCD5N60_F085

Power Field-Effect Transistor, 4.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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RoHS
Compliant

Physical

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Case/Package
TO-252-3
Mount
-55 °C
Weight
260.37 mg

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
4.6 A
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Input Capacitance
570 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Rds On Max
1.1 Ω

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