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onsemi FDC365P

P-Channel Power Trench MOSFET, -35V, -4.3A, 55m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
55 MΩ

Dimensions

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Height
1 mm
Length
3 mm
Width
1.7 mm

Physical

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Case/Package
SOT-23-6
Mount
-55 °C
Number of Pins
6
Weight
IBS

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
-4.3 A
Drain to Source Breakdown Voltage
-35 V
Drain to Source Resistance
45 mΩ
Drain to Source Voltage (Vdss)
45 mΩ
Element Configuration
Single
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
800 mW
Rds On Max
55 mΩ
Resistance
55 MΩ
Rise Time
55 mΩ
Threshold Voltage
3 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
7 ns

Compliance Documents

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