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onsemi FDC8884

N-Channel Power Trench MOSFET, 30 V, 6.5 A, 23 m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
23 mΩ

Dimensions

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Height
1 mm
Length
3 mm
Width
1.7 mm

Physical

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Case/Package
SOT-6
Mount
Surface Mount
Number of Pins
6
Weight
IBS

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
6.5 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
23 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
1 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
465 pF
Max Operating Temperature
150 °C
Max Power Dissipation
800 mW
Min Operating Temperature
-55 °C
Power Dissipation
800 mW
Rds On Max
23 mΩ
Rise Time
1 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
5 ns

Compliance Documents

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