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onsemi FDFMA2P029Z

Integrated P-Channel PowerTrench MOSFET and Schottky Diode, -20V, 3.1A, 95m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
11 ns

Dimensions

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Height
750 µm
Length
2 mm
Width
2 mm

Physical

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Mount
Surface Mount
Number of Pins
6
Weight
40 mg

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
3.1 A
Current Rating
-3.1 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
95 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Single
Fall Time
11 ns
Gate to Source Voltage (Vgs)
750 µm
Input Capacitance
720 pF
Max Operating Temperature
150 °C
Max Power Dissipation
-55 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
1.4 W
Rds On Max
95 mΩ
Resistance
95 MΩ
Rise Time
95 mΩ
Turn-Off Delay Time
37 ns
Turn-On Delay Time
IBS
Voltage Rating (DC)
-20 V

Compliance Documents

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