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onsemi FDFMA3N109

Integrated N-Channel PowerTrenchMOSFET and Schottky Diode 30 V, 2.9 A, 123 m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
750 µm
Length
2 mm
Width
2 mm

Physical

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Case/Package
SOT-363
Mount
Surface Mount
Number of Pins
6
Weight
60 mg

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
2.9 A
Current Rating
2.9 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
123 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
220 pF
Max Operating Temperature
150 °C
Max Power Dissipation
1.5 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.5 W
Rds On Max
123 mΩ
Resistance
123 MΩ
Rise Time
8 ns
Threshold Voltage
1 V
Turn-Off Delay Time
12 ns
Turn-On Delay Time
6 ns
Voltage Rating (DC)
30 V

Compliance Documents

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