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onsemi FDFS2P106A

Integrated P-Channel PowerTrench MOSFET and Schottky Diode, -60V, -3.0 A, 110 m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
110 mΩ

Dimensions

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Height
1.75 mm

Physical

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Case/Package
SOIC
Mount
-55 °C
Number of Pins
8
Weight
IBS

Supply Chain

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Lifecycle Status
EOL

Technical

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Continuous Drain Current (ID)
-3 A
Current Rating
-3 A
Drain to Source Breakdown Voltage
-60 V
Drain to Source Resistance
110 mΩ
Drain to Source Voltage (Vdss)
110 mΩ
Element Configuration
Single
Fall Time
8.5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
714 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2 W
Rds On Max
110 mΩ
Rise Time
11 ns
Turn-Off Delay Time
28 ns
Turn-On Delay Time
8 ns
Voltage Rating (DC)
Compliant

Compliance Documents

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