Skip to main content

onsemi FDG312P

P-Channel PowerTrench MOSFET, 2.5V Specified, -1.2 A, 180 m

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
1.1 mm
Length
2 mm
Width
1.25 mm

Physical

Select to search
related specs
Case/Package
SC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Weight
28 mg

Supply Chain

Select to search
related specs
Lifecycle Status
Obsolete

Technical

Select to search
related specs
Continuous Drain Current (ID)
1.2 A
Current Rating
-1.2 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
135 mΩ
Drain to Source Voltage (Vdss)
-20 V
Element Configuration
Single
Fall Time
12 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
330 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
750 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
750 mW
Rds On Max
180 mΩ
Resistance
180 mΩ
Rise Time
12 ns
Threshold Voltage
900 mV
Turn-Off Delay Time
16 ns
Turn-On Delay Time
7 ns
Voltage Rating (DC)
-20 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us