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onsemi FDG316P

Logic Level PowerTrench MOSFET, P-Channel, -30 V, -1.6 A, 190 m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
190 MΩ

Dimensions

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Height
1 mm
Length
2 mm
Width
1.25 mm

Physical

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Case/Package
SC
Contact Plating
Tin
Mount
-55 °C
Number of Pins
6
Weight
28 mg

Supply Chain

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Lifecycle Status
EOL

Technical

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Continuous Drain Current (ID)
1.6 A
Current Rating
1.6 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
160 mΩ
Drain to Source Voltage (Vdss)
160 mΩ
Element Configuration
Single
Fall Time
9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
OBSOLETE
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
750 mW
Rds On Max
190 mΩ
Resistance
190 MΩ
Rise Time
9 ns
Threshold Voltage
-1.6 V
Turn-Off Delay Time
14 ns
Turn-On Delay Time
8 ns
Voltage Rating (DC)
30 V

Compliance Documents

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