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onsemi FDMD8280

Dual N-Channel Power Trench MOSFET 80V, 40A, 8.2m

Product Details

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Compliance

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RoHS
8.2 mΩ

Dimensions

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Height
800 µm

Physical

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Case/Package
DFN
Mount
-55 °C
Number of Pins
12
Weight
82.3188 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
11:00 AM
Drain to Source Breakdown Voltage
11 A
Drain to Source Resistance
6.6 mΩ
Drain to Source Voltage (Vdss)
6.6 mΩ
Element Configuration
Dual
Fall Time
8.9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
800 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Packaging
Tape & Reel (TR)
Power Dissipation
2.1 W
Rds On Max
8.2 mΩ
Rise Time
12 ns
Turn-Off Delay Time
26 ns
Turn-On Delay Time
Compliant

Compliance Documents

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