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onsemi FDMS3606AS

Asymmetric Dual N-Channel MOSFET, PowerTrench Power Stage, 30V

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
8 mΩ

Dimensions

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Height
1.05 mm
Length
5 mm
Width
6 mm

Physical

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Mount
Surface Mount
Number of Pins
8
Weight
IBS

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
27 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
2.8 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Dual
Fall Time
3.4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.695 nF
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-55 °C
Number of Elements
2
Power Dissipation
2.5 W
Rds On Max
8 mΩ
Rise Time
5.5 ns
Threshold Voltage
2 V
Turn-Off Delay Time
Compliant

Compliance Documents

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