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onsemi FDMS3672

N-Channel UltraFET Trench MOSFET 100V, 22A, 23m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
23 MΩ

Dimensions

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Height
750 µm
Length
5 mm
Width
6 mm

Physical

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Contact Plating
Gold
Mount
-55 °C
Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
7.4 A
Current
22 A
Current Rating
22 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
19 mΩ
Drain to Source Voltage (Vdss)
19 mΩ
Fall Time
8 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
800 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
2.5 W
Rds On Max
23 mΩ
Resistance
23 MΩ
Rise Time
23 mΩ
Turn-Off Delay Time
11 ns
Turn-On Delay Time
Compliant
Voltage
100 V
Voltage Rating (DC)
IBS

Compliance Documents

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