Skip to main content

onsemi FDMS86202ET120

N-Channel Shielded Gate PowerTrench MOSFET 120V, 102A, 7.2m

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
RoHS
Compliant

Dimensions

Select to search
related specs
Height
1.1 mm

Physical

Select to search
related specs
Mount
Surface Mount
Number of Pins
8
Weight
56.5 mg

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Continuous Drain Current (ID)
13.5 A
Drain to Source Breakdown Voltage
120 V
Drain to Source Resistance
6 mΩ
Drain to Source Voltage (Vdss)
120 V
Element Configuration
Single
Fall Time
5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
4.585 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
3.3 W
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Power Dissipation
3.3 W
Rds On Max
7.2 mΩ
Rise Time
6 ns
Turn-Off Delay Time
27.2 ns
Turn-On Delay Time
21 ns

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us