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onsemi FDMT80060DC

Power Field-Effect Transistor, 292A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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RoHS
1.1 mΩ

Dimensions

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Height
1.02 mm

Physical

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Mount
-55 °C
Number of Pins
8
Weight
248.52072 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
43 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
870 µΩ
Drain to Source Voltage (Vdss)
870 µΩ
Element Configuration
Single
Fall Time
19 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
20.17 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
3.2 W
Rds On Max
1.1 mΩ
Rise Time
47 ns
Turn-Off Delay Time
66 ns
Turn-On Delay Time
Compliant

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