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onsemi FDN336P

P-Channel PowerTrench MOSFET, Logic Level, -20V, -1.3A, 200m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.12 mm
Length
2.92 mm
Width
1.4 mm

Physical

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Case/Package
SOT-23-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
30 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
1.2 A
Current Rating
-1.3 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
122 mΩ
Drain to Source Voltage (Vdss)
-20 V
Dual Supply Voltage
-20 V
Element Configuration
Single
Fall Time
12 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
330 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-55 °C
Nominal Vgs
-900 mV
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
500 mW
Rds On Max
200 mΩ
Resistance
200 mΩ
Rise Time
12 ns
Termination
SMD/SMT
Threshold Voltage
-900 mV
Turn-Off Delay Time
16 ns
Turn-On Delay Time
7 ns
Voltage Rating (DC)
-20 V

Compliance Documents

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