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onsemi FDN86501LZ

N-Channel PowerTrench® MOSFET, Shielded Gate, 60 V, 2.6 A, 116 mΩ

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
1.12 mm

Physical

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Case/Package
SOT-23-3
Mount
Surface Mount
Weight
30 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
2.6 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
89 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
335 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
600 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Power Dissipation
600 mW
Rds On Max
116 mΩ
Turn-Off Delay Time
9.6 ns
Turn-On Delay Time
4.4 ns

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