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onsemi FDP150N10A-F102

Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Radiation Hardening
No
RoHS
15 mΩ

Dimensions

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Height
15.215 mm
Length
10.36 mm
Width
IBS

Physical

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Case/Package
TO-220
Mount
-55 °C
Number of Pins
3
Weight
1.8 g

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
50 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
12.5 mΩ
Drain to Source Voltage (Vdss)
12.5 mΩ
Element Configuration
Single
Fall Time
5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
19.85 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
91 W
Rds On Max
15 mΩ
Rise Time
16 ns
Turn-Off Delay Time
21 ns
Turn-On Delay Time
Compliant

Compliance Documents

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