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onsemi FFB5551

Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1 mm
Length
2 mm
Width
1.25 mm

Physical

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Case/Package
SC
Mount
Surface Mount
Number of Pins
6
Weight
IBS

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
180 V
Collector Emitter Breakdown Voltage
160 V
Collector Emitter Saturation Voltage
200 mV
Collector Emitter Voltage (VCEO)
160 V
Current Rating
200 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
80
Max Breakdown Voltage
160 V
Max Collector Current
200 mA
Max Frequency
300 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Number of Elements
2
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
200 mW
Transition Frequency
300 MHz
Voltage Rating (DC)
160 V

Compliance Documents

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