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onsemi FGL60N100BNTDTU

Transistor, igbt, n-Chan+Diode, 1Kv V(Br)Ces, 42A I(C), to-264 Rohs Compliant: Yes

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
26 mm
Length
20 mm
Width
5 mm

Physical

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Case/Package
TO-264
Mount
-55 °C
Number of Pins
3
Weight
6.756 g

Supply Chain

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Lifecycle Status
EOL

Technical

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Collector Emitter Breakdown Voltage
1 kV
Collector Emitter Saturation Voltage
1.5 V
Collector Emitter Voltage (VCEO)
1 kV
Current Rating
60 A
Element Configuration
Single
Max Collector Current
60 A
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Power Dissipation
180 W
Reverse Recovery Time
1.2 µs
Voltage Rating (DC)
1.2 µs

Compliance Documents

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