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ROHM DTA114EETL

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 5 V 1 mA 25 MHz 15 mW Surface Mount EMT3

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

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Mount
Surface Mount
Number of Pins
3
Number of Terminals
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
300 mV
Continuous Collector Current
-50 mA
Current Rating
-50 mA
Element Configuration
Single
hFE Min
30
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Output Current
100 mA
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Operating Supply Voltage
50 V
Packaging
Tape & Reel
Polarity
PNP
Power Dissipation
150 mW
Termination
SMD/SMT
Transition Frequency
250 MHz
Voltage Rating (DC)
-50 V

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