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ROHM DTD113ZUT106

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 5 V 5 mA 2 MHz 2 mW Surface Mount UMT3

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

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Case/Package
SC
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
300 mV
Current Rating
500 mA
Element Configuration
Single
hFE Min
82
Max Breakdown Voltage
50 V
Max Collector Current
500 mA
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Packaging
Digi-Reel®
Polarity
NPN
Power Dissipation
200 mW
Transition Frequency
200 MHz
Voltage Rating (DC)
50 V

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