Skip to main content

ROHM IMT17T110

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Select to search
related specs
Case/Package
SMD/SMT
Mount
Surface Mount
Number of Pins
6

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
-60 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
600 mV
Current Rating
-500 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
-5 V
Gain Bandwidth Product
200 MHz
hFE Min
120
Max Breakdown Voltage
50 V
Max Collector Current
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
-55 °C
Min Operating Temperature
-55 °C
Packaging
Cut Tape (CT)
Polarity
PNP
Power Dissipation
300 mW
Transition Frequency
200 MHz
Voltage Rating (DC)
-50 V

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us