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STMicroelectronics 2N6059.

Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
TO-3
Contact Plating
Tin
Mount
Chassis Mount, Through Hole
Number of Pins
2

Technical

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Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
100 V
Collector Emitter Saturation Voltage
2 V
Collector Emitter Voltage (VCEO)
100 V
Current Rating
12 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
hFE Min
100
Max Collector Current
12 A
Max Operating Temperature
200 °C
Max Power Dissipation
150 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
150 W
Transition Frequency
4 MHz
Voltage Rating (DC)
100 V

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