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STMicroelectronics 2SD1047

Bipolar Transistors - BJT High power NPN epitaxial planar bipolar transistor

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
23.6 mm

Physical

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Contact Plating
Tin
Mount
Through Hole
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
200 V
Collector Emitter Breakdown Voltage
140 V
Collector Emitter Saturation Voltage
700 mV
Collector Emitter Voltage (VCEO)
140 V
Emitter Base Voltage (VEBO)
6 V
Frequency
20 MHz
Gain Bandwidth Product
20 MHz
hFE Min
50
Max Collector Current
12 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
100 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
100 W
Transition Frequency
20 MHz

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