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STMicroelectronics 2STF2360

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.6 mm
Length
4.6 mm
Width
2.6 mm

Physical

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Case/Package
SOT-89
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
-60 V
Collector Emitter Breakdown Voltage
60 V
Collector Emitter Saturation Voltage
-300 mV
Collector Emitter Voltage (VCEO)
-60 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
-6 V
Frequency
130 MHz
Gain Bandwidth Product
130 MHz
hFE Min
160
Max Breakdown Voltage
60 V
Max Collector Current
3 A
Max Frequency
130 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.4 W
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.4 W
Termination
SMD/SMT
Transition Frequency
130 MHz

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