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STMicroelectronics BD139-10

BD139 Series 80 V 3 mA Through Hole NPN Epitaxial Transistor - SOT-32

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
10.8 mm
Length
7.8 mm
Width
2.7 mm

Physical

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Case/Package
SOT-32
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
80 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
hFE Min
63
Max Collector Current
1.5 A
Max Operating Temperature
150 °C
Max Power Dissipation
12.5 W
Min Operating Temperature
-65 °C
Number of Channels
1
Number of Elements
1
Polarity
NPN
Power Dissipation
1.25 W

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