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STMicroelectronics BU406

Bipolar (BJT) Transistor NPN 200 V 7 A 10MHz 60 W Through Hole TO-220AB

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
9.15 mm
Length
10.4 mm
Width
4.6 mm

Physical

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Case/Package
TO-220-3
Mount
Through Hole
Number of Pins
3

Technical

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Collector Base Voltage (VCBO)
400 V
Collector Emitter Breakdown Voltage
200 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
200 V
Current Rating
7 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
10 MHz
Gain Bandwidth Product
10 MHz
Max Collector Current
7 A
Max Operating Temperature
150 °C
Max Power Dissipation
60 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
60 W
Transition Frequency
10 MHz
Voltage Rating (DC)
150 V

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