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STMicroelectronics BUZ11A

Power Field-Effect Transistor, 25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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RoHS
Non-Compliant

Physical

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Case/Package
TO-220
Mount
Through Hole

Technical

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Continuous Drain Current (ID)
26 A
Drain to Source Breakdown Voltage
50 V
Drain to Source Resistance
55 mΩ
Element Configuration
Single
Fall Time
20 ns
Gate to Source Voltage (Vgs)
20 V
Max Operating Temperature
175 °C
Min Operating Temperature
-65 °C
Number of Elements
1
Power Dissipation
75 W
Rise Time
95 ns
Turn-Off Delay Time
50 ns

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