Skip to main content

STMicroelectronics ESM2012DV

Power Bipolar Transistor, 120A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Width
25.4 mm

Physical

Select to search
related specs
Case/Package
Module
Mount
Chassis Mount, Screw
Number of Pins
4

Technical

Select to search
related specs
Collector Emitter Breakdown Voltage
120 V
Collector Emitter Saturation Voltage
1.5 V
Collector Emitter Voltage (VCEO)
150 V
Current Rating
120 A
Emitter Base Voltage (VEBO)
7 V
hFE Min
1200
Max Collector Current
120 A
Max Operating Temperature
150 °C
Max Power Dissipation
175 W
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
175 W
Voltage Rating (DC)
120 V

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us