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STMicroelectronics IRF530

Mosfet N-ch 100V 14A TO-220 / N - Channel Enhancement Mode Power Mos Transistor

Product Details

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Compliance

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Lead Free
Contains Lead
RoHS
Compliant

Physical

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Case/Package
TO-220
Mount
Through Hole

Technical

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Continuous Drain Current (ID)
14 A
Current Rating
14 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
180 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
458 pF
Max Operating Temperature
175 °C
Max Power Dissipation
60 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
60 W
Rds On Max
160 mΩ
Rise Time
25 ns
Turn-Off Delay Time
32 ns
Voltage Rating (DC)
100 V

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