Skip to main content

STMicroelectronics IRF820

N-Channel 500V - 2.5 Ohm - 4A - TO-220 PowerMESH(TM) II MOSFET

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Contains Lead
Radiation Hardening
No
RoHS
3 Ω

Physical

Select to search
related specs
Case/Package
TO-220-3
Mount
Through Hole

Technical

Select to search
related specs
Continuous Drain Current (ID)
4:00 AM
Current Rating
4 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
3 Ω
Drain to Source Voltage (Vdss)
500 V
Element Configuration
Single
Fall Time
13 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
315 pF
Max Operating Temperature
150 °C
Max Power Dissipation
80 W
Min Operating Temperature
-65 °C
Power Dissipation
80 W
Rds On Max
3 Ω
Rise Time
13 ns
Turn-On Delay Time
10 ns
Voltage Rating (DC)
Compliant

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us