Taiwan Semiconductor P6KE6V8A
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Breakdown Voltage
6.8 V
Clamping Voltage
10.5 V
Forward Voltage
1 V
Max Breakdown Voltage
7.14 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
175 °C
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
1 mA
Min Breakdown Voltage
6.45 V
Peak Pulse Current
57.1 A
Power Dissipation
200 mW
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
5.8 V