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Taiwan Semiconductor SMBJ9V0A
Product Details
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Breakdown Voltage
10.6 V
Clamping Voltage
15.4 V
Forward Voltage
1 V
Max Breakdown Voltage
11.1 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
150 °C
Max Repetitive Reverse Voltage (Vrrm)
150 °C
Max Reverse Leakage Current
10 µA
Min Breakdown Voltage
10 µA
Peak Pulse Current
39 A
Power Dissipation
200 mW
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
9 V