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Taiwan Semiconductor SS1H20LS
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Forward Voltage
850 mV
Max Forward Surge Current (Ifsm)
30 A
Max Junction Temperature (Tj)
150 °C
Max Repetitive Reverse Voltage (Vrrm)
200 V
Max Reverse Leakage Current
1 µA
Power Dissipation
400 mW
Reverse Recovery Time
25 ns