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Taiwan Semiconductor TS431ACT
Product Details
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Compliance
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REACH SVHC
No SVHC
RoHS
Compliant
Dimensions
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Width
4.7 mm
Physical
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Case/Package
TO-92
Number of Pins
3
Supply Chain
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Lifecycle Status
NRND
Technical
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Breakdown Voltage
51 V
Cathode Current
400 µA
Clamping Voltage
400 µA
Collector Base Voltage (VCBO)
-40 V
Collector Emitter Saturation Voltage
-400 mV
Collector Emitter Voltage (VCEO)
50 V
Continuous Collector Current
-200 mA
Drain to Source Voltage (Vdss)
-60 V
Dropout Voltage
950 mV
Emitter Base Voltage (VEBO)
40 V
Forward Voltage
1 V
Gain Bandwidth Product
1 MHz
Gate to Source Voltage (Vgs)
-1.5 V
hFE Min
100
Input Capacitance
436 pF
Max Breakdown Voltage
9.8 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Input Voltage
37 V
Max Junction Temperature (Tj)
70 °C
Max Operating Temperature
70 °C
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
1 µA
Max Supply Voltage
37 V
Max Switching Frequency
150 kHz
Min Breakdown Voltage
25.4 V
Min Operating Temperature
0 °C
Min Supply Voltage
4.5 V
Min Switching Frequency
100 Hz
Nominal Supply Current
25 nA
Number of Channels
2
Output Current
100 mA
Output Voltage
5 V
Peak Pulse Current
21.4 A
Power Dissipation
150 mW
Quiescent Current
3 mA
Reference Type
Shunt
Reference Voltage
1.25 V
Response Time
1.3 µs
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
1.3 µs
Switching Current
2 A
Temperature Coefficient
2:00 AM
Test Current
IBS
Zener Voltage
50 ppm/°C