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Taiwan Semiconductor TS5205CX533
Product Details
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Compliance
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RoHS
Non-Compliant
Physical
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Case/Package
SOT-25
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Lifecycle Status
Production
Technical
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Breakdown Voltage
51 V
Clamping Voltage
70.1 V
Collector Base Voltage (VCBO)
-40 V
Collector Emitter Saturation Voltage
-400 mV
Collector Emitter Voltage (VCEO)
50 V
Continuous Collector Current
-200 mA
Drain to Source Voltage (Vdss)
-60 V
Dropout Voltage
170 mV
Emitter Base Voltage (VEBO)
40 V
Forward Voltage
1 V
Gain Bandwidth Product
1 MHz
Gate to Source Voltage (Vgs)
-1.5 V
hFE Min
100
Input Capacitance
436 pF
Max Breakdown Voltage
9.8 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
150 °C
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
1 µA
Max Supply Voltage
20 V
Min Breakdown Voltage
25.4 V
Min Supply Voltage
3 V
Nominal Supply Current
25 nA
Number of Channels
2
Output Current
150 mA
Output Voltage
3.3 V
Peak Pulse Current
21.4 A
Power Dissipation
150 mW
Quiescent Current
1.3 mA
Reference Voltage
1.25 V
Response Time
1.3 µs
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
1.3 µs
Test Current
2.5 mA
Zener Voltage
75 V