Skip to main content

Toshiba 2SA1312GRTE85LF

Transistor GP BJT PNP 120V 100mA 3-Pin TO-236MOD

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

Select to search
related specs
Case/Package
TO-236-3
Mount
Surface Mount
Number of Pins
3

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
-120 V
Collector Emitter Breakdown Voltage
120 V
Collector Emitter Voltage (VCEO)
300 mV
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Gain Bandwidth Product
100 MHz
hFE Min
200
Max Breakdown Voltage
120 V
Max Collector Current
100 mA
Max Power Dissipation
150 mW
Packaging
Tape & Reel (TR)
Polarity
PNP
Transition Frequency
100 MHz

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us