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Toshiba 2SK3767

Name: 2SK3767
Availability: OutOfStock

2A I(D) 600V 4.5ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET

Product Details

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RoHS

Compliant

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Number of Pins

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Continuous Drain Current (ID)

2 A

Drain to Source Resistance

4.5 Ω

Drain to Source Voltage (Vdss)

600 V

Max Operating Temperature

150 °C

Max Power Dissipation

25 W

Power Dissipation

25 W

Threshold Voltage

4 V

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