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Toshiba 2SK3878(F)

Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
1.3 Ω

Dimensions

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Height
19 mm
Length
15.9 mm
Width
4.8 mm

Physical

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Contact Plating
Copper, Silver, Tin
Mount
-55 °C
Number of Pins
3

Technical

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Continuous Drain Current (ID)
9:00 AM
Drain to Source Resistance
9 A
Drain to Source Voltage (Vdss)
1.3 Ω
Element Configuration
Single
Fall Time
20 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
2.2 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
4 V
Number of Elements
1
Power Dissipation
150 W
Rds On Max
1.3 Ω
Rise Time
25 ns
Threshold Voltage
4 V

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