Home Products Discrete Semiconductors Transistors BJTs HN1B04FE-GR,LF

Toshiba HN1B04FE-GR,LF

Name: HN1B04FE-GR,LF
Availability: OutOfStock

Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6

Product Details

Select to search
related specs

RoHS

Compliant

Select to search
related specs

Mount

Surface Mount

Select to search
related specs

Collector Emitter Breakdown Voltage

50 V

Collector Emitter Voltage (VCEO)

250 mV

Max Breakdown Voltage

50 V

Max Collector Current

150 mA

Max Power Dissipation

100 mW

Packaging

Cut Tape (CT)

Transition Frequency

80 MHz

Call or Request Quote for Pricing