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Toshiba SSM6J213FE(TE85L,F

Pb-f UDFN6 Pch Mosfet (lf) Transistor Pd: 1W VDS=20V

Product Details

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Compliance

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RoHS
Compliant

Physical

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Mount
Surface Mount
Number of Pins
6

Technical

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Capacitance
290 pF
Continuous Drain Current (ID)
2.6 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
250 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
290 pF
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-55 °C
Packaging
Cut Tape (CT)
Power Dissipation
500 mW
Rds On Max
103 mΩ

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