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Toshiba TK20A60U(Q)

Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-220SIS

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
SC
Mount
-55 °C
Number of Pins
3

Technical

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Continuous Drain Current (ID)
20 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
190 mΩ
Drain to Source Voltage (Vdss)
190 mΩ
Element Configuration
Single
Fall Time
100 ns
Gate to Source Voltage (Vgs)
30 V
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
45 W
Rise Time
80 ns
Threshold Voltage
3 V
Turn-Off Delay Time
12 ns

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