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Toshiba TK65G10N1,RQ

Trans MOSFET N-CH Si 100V 136A 3-Pin(2+Tab) D2PAK T/R

Product Details

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Compliance

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RoHS
Compliant

Physical

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Case/Package
TO-263-3
Mount
Surface Mount
Weight
3.949996 g

Technical

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related specs
Continuous Drain Current (ID)
65 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
3.8 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
26 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
5.4 nF
Max Operating Temperature
150 °C
Max Power Dissipation
156 W
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Rds On Max
4.5 mΩ
Rise Time
19 ns
Turn-Off Delay Time
85 ns
Turn-On Delay Time
44 ns

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