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Toshiba TK9J90E,S1E

Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-3PN

Product Details

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Compliance

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RoHS
1.3 Ω

Physical

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Mount
-55 °C
Weight
6.961991 g

Technical

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related specs
Continuous Drain Current (ID)
9:00 AM
Drain to Source Breakdown Voltage
9 A
Drain to Source Resistance
1 Ω
Drain to Source Voltage (Vdss)
1 Ω
Element Configuration
Single
Fall Time
35 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
2 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Rds On Max
1.3 Ω
Rise Time
40 ns
Turn-Off Delay Time
140 ns
Turn-On Delay Time
Compliant

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