Skip to main content

Toshiba TTC5200(Q)

Bipolar (BJT) Transistor NPN 23 V 15 A 3MHz 15 W Through Hole TO-3P(L)

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Select to search
related specs
Height
26 mm
Length
20.5 mm
Width
5.2 mm

Physical

Select to search
related specs
Mount
Through Hole
Number of Pins
3

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
230 V
Collector Emitter Breakdown Voltage
230 V
Collector Emitter Saturation Voltage
3 V
Collector Emitter Voltage (VCEO)
230 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
30 MHz
Gain Bandwidth Product
30 MHz
hFE Min
80
Max Collector Current
15 A
Max Frequency
30 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
150 W
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
150 W
Transition Frequency
30 MHz

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us