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Wolfspeed C3M0280090D

Silicon Carbide Power MOSFET C3MTM Planar MOSFET Technology N-Channel Enhancement Mode

Product Details

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Compliance

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REACH SVHC
No SVHC
RoHS
Non-Compliant

Dimensions

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Height
25.5 mm

Physical

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Case/Package
TO-247-3
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
10.2 A
Current Rating
11.5 A
Drain to Source Breakdown Voltage
900 V
Drain to Source Resistance
280 mΩ
Drain to Source Voltage (Vdss)
280 mΩ
Gate to Source Voltage (Vgs)
19 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
-55 °C
Power Dissipation
45 W
Threshold Voltage
2.1 V
Turn-Off Delay Time
8.5 ns
Turn-On Delay Time
5.3 ns

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